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Semiconductor Mcq Question Set 3

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1. The impurity level in an extrinsic semiconductor is about …….. of pure semiconductor.




2. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ……..




3. A hole and electron in close proximity would tend to ……..




4. In a semiconductor, current conduction is due ……..




5. The random motion of holes and free electrons due to thermal agitation is called ……..




6. A forward biased pn junction has a resistance of the ……..




7. The battery connections required to forward bias a pn junction are ……..




8. The barrier voltage at a pn junction for germanium is about ……..




9. In the depletion region of a pn junction, there is a shortage of ……….




10. A reverse biased pn junction has ……..




11. A pn junction acts as a ……..




12. A reverse biased pn junction has resistance of the……..




13. The leakage current across a pn junction is due to ……..




14. When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on ……..




15. With forward bias to a pn junction, the width of depletion layer ……..




16. The leakage current in a pn junction is of the order of ……..




17. In an intrinsic semiconductor, the number of free electrons ……..




18. At room temperature, an intrinsic semiconductor has ……..




19. At absolute temperature, an intrinsic semiconductor has …….




20. At room temperature, an intrinsic silicon crystal acts approximately as ……..




21. Which among the following is the most commonly used semiconductor?




22. What happens to the resistance of a pure semiconductor when heated?




23. How many valence electrons does a pentavalent impurity have?




24. How many valence electrons do trivalent impurities have?




25. Which of the following is created when trivalent impurities are added to a semiconductor?




26. Which of the following does a hole in the semiconductor define?




27. An electron and a hole in close proximity would tend to _____.




28. An electron and a hole in close proximity would tend to _____.




29. What is the random motion of free electrons and holes due to thermal agitation called?




30. Why is the mobility of free electrons greater than that of holes?




31. Which of the following does the resistivity of a semiconductor depend upon?




32. Which of the following statements is true about extrinsic semiconductors?




33. In a semiconductor




34. Let nh and ne be the number of holes and conduction electrons in an extrinsic semiconductor. Then




35. Electric conduction in a semiconductor takes place due to




36. The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of




37. The electrical conductivity of pure germanium can be increased by




38. The resistivity of a semiconductor at room temperature is in between




39. In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order is




40. The forbidden energy gap for germanium crystal at 0 K is




41. In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of




42. What is the resistivity of a pure semiconductor at absolute zero ?




43. Temperature coefficient of resistance of semiconductor is




44. In a p-type semiconductor, the acceptor valence band is




45. In an n-type semiconductor, donor valence band is




46. The mobility of free electrons is greater than that of free holes because




47. The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by




48. In semiconductors, at room temperature




49. At absolute zero, Si acts as




50. One serious drawback of semi-conductor devices is